Dielectric properties of Bi12SiO20 crystals doped with Al

  • T. V. Panchenko Oles Honchar Dnipro National University, Dnipro, Ukraine
  • L. M. Karpova Ukrainian State University of Chemical Technology, Dnipro, Ukraine
Keywords: complex dielectric permittivity, voltage-farad characteristics, Bi12SiO20 crystals, Al impurity


The temperature-frequency dependences of the complex dielectric permittivity ε and the voltage-farad characteristics of undoped and aluminum doped Bi12SiO20 crystals are studied before and after their polarization. It is shown that Al ions in the Bi12SiO20 dielectric matrix provide a significant increase as well as nonlinearity of ε in the temperature range 300 – 800 K and electric field strengths Е = 103 – 104 V/cm. It is shown that polarization causes the appearance of dielectric hysteresis loops. Al impurity significantly affects the appearance and parameters of these loops. The role of Al ions in increasing the contribution of the quasi-dipole mechanism in the polarization processes is revealed.