Relaxation phenomena in electron plasma of semiconductors

  • S. A. Sokolovsky Prydniprovska State Academy of Civil Engineering and Architecture, Dnipro, Ukraine
  • A. I. Sokolovsky Oles Honchar Dnipro National University, Dnipro, Ukraine
  • O. A. Hrinishyn Oles Honchar Dnipro National University, Dnipro, Ukraine
Keywords: semiconductor, hydrodynamic states, ideal and real liquid approximations, temperature and velocity relaxation, steady states, mobility, conductivity, the Debye temperature


The hydrodynamics of the electron subsystems of semiconductors is studied in the approximations of the ideal and real liquid, taking into account processes of relaxation of temperatures and macroscopic velocities of electrons and phonons without assuming the local equilibrium of the system. A set of integral equations for the electron distribution function of the first order in gradients is obtained, which determines the sources in the hydrodynamic equations of the ideal liquid approximation and the dissipative flows of energy and momentum of electrons. The steady states of the system in the ideal liquid approximation are investigated. The exact formulas for the electron mobility of the semiconductor and its conductivity are derived and kinetic coefficients that determine current in a spatially inhomogeneous state are calculated. In the presence of an electric field, the phenomenon of difference of temperatures of the electron and phonon subsystems is predicted. The obtained expressions are specified for the case of temperatures much higher the Debye temperature.