Preparation of Fe-Si-B-(Cu,Nb,Ni,Mo) films by quenching from a vapor state

Authors

  • S. I. Ryabtsev Oles Honchar Dnipro National University, Dnipro, Ukraine
  • O. I. Kushnerov Oles Honchar Dnipro National University, Dnipro, Ukraine
  • V. F. Bashev Oles Honchar Dnipro National University, Dnipro, Ukraine Dnipro State Technical University, Kamianske, Dnipropetrovsk region, Ukraine
  • T. V. Kalinina Dnipro State Technical University, Kamianske, Dnipropetrovsk region, Ukraine
  • T. M. Dorozhka Dnipro State Technical University, Kamianske, Dnipropetrovsk region, Ukraine

DOI:

https://doi.org/10.15421/332317

Keywords:

thin film, ion-plasma sputtering, amorphous structure, coercive force, metastable state, temperature coefficient of resistance

Abstract

Using modernized three-electrode ion-plasma sputtering, homogeneous thin films of Fe-Si-B-(Cu, Nb), and Fe-Si-B-(Ni, Mo) were obtained. The structure of the films was investigated by X-ray diffraction and electron microscopy. It was established that as a result of sputtering, amorphous and nanocrystalline phases with a coherent scattering region (CSR) size of 1.6 nm and 12 nm were formed in the Fe73Si16B7-(Cu, Nb)4 and Fe78.5Si6B14-(Ni, Mo)1.5 films. The thermal stability of metastable states of the films, as well as the
electrical and magnetic properties of freshly prepared and heat-treated films were studied. The conditions for obtaining films with small (modulo) values of the temperature coefficient of electrical resistance ( - 0.9∙10-5 K-1) and coercive force (HC ~ 11 A/m) were determined.

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Published

29-12-2023

Issue

Vol. 31 No. 2 (2023)

Section

Articles