Heterophotocell based on super-line photoventil effect

Abstract

The paper considers the superliner photovoltaic effect associated with the modification of heterojunctions of the рCu₂S–nSi type by introducing a silicon nanocluster subsystem into it at the junction boundary. The design of a photocell containing two sequentially articulated p–n junctions of counter action, photoactive in different regions of the spectrum, is proposed.

We show that film heterojunctions, which include a nanocluster subsystem, have a difference from the non-clustered version. Heterophotocells without nanocluster subsystem always have sublinear, or, in rare cases, linear lux-ampere characteristics (up to illumination ~ 5 10 4 lx), while because of introducing nanocluster centers into the base p-region of the Cu₂S–Si heterojunctions, a significantly higher integral sensitivity is achieved at high illumination of the samples in the mode of a valve photocell.