High-adhesion unlayered films: physical and technological basis of their production

Abstract

Using the modernized three-electrode ion-plasma sputtering method, high-adhesion Cu-films without underlayer were obtained. Films were deposited on glass-ceramic (sitall) substrates. The film thickness was ~500 nm. In this case, the calculated cooling rate reached ~ 10¹²–10¹⁴ K/s. The adhesion properties of Cu films were investigated by the standard method of mechanical separation of the film from the substrate – the “fungus” method. It is established that such film adhesion is more than 20 MPa. It is determined that the obtained high adhesion depends on bias potential value. Using these Cu films in strip resonators without a sublayer makes it possible to increase their Q-factor by 1.5–1.7 times and thereby significantly reduce the resulting operating noise.