Effect of thermal treatment on structure and leakage current of Na0.5Bi0.5TiO3 thin films

Authors

  • T. V. Kruzina Oles Honchar Dnipro National University, Dnipro, Ukraine
  • S. A. Popov Oles Honchar Dnipro National University, Dnipro, Ukraine
  • Yu. N. Potapovich Oles Honchar Dnipro National University, Dnipro, Ukraine
  • A. S. Rutskyi Oles Honchar Dnipro National University, Dnipro, Ukraine

DOI:

https://doi.org/10.15421/331808

Keywords:

magnetron deposition, sodium-bismuth titanate, leakage current density, oxygen vacancies

Abstract

Na0.5Bi0.5TiO thin films were grown on heated to 200°С Pt/TiO2/SiO2/Si substrates by ex-situ method with high-frequency (13.56 MHz) magnetron deposition. Thermal treatment of the films was carried out at 650°С, 700°С and 800°С. X-ray diffraction investigations showed the films were poly-crystalline and contained additional phase. In the films annealed at 700°C two dominating conduction mechanisms were observed: ohmic at the fields Е < 8 kV/cm and Schottky emission in the field range of 30 – 70 kV/cm. It is also observed that the increase of the film annealing temperature to 800°С leads to the increase of leakage currents. It is assumed that high values of the leakage currents were attributed to the presence of both structure defects and additional unknown phase.

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Published

03-12-2018

Issue

Vol. 26 No. 1 (2018)

Section

Articles