Modeling of temperature stabilization kinetics of solar cell with posistor layer at local overheating

Анотація

The kinetics of changes in the maximum temperature and voltage drop in the plate of a separate solar photocell of a large area, which is in thermal contact with an additional posistor layer, in the presence of an overvoltage displacing the p-n junction of the photocell in the opposite direction, are investigated by modeling. It is shown that due to the expansion of the region of local heating of such an element for a time of several seconds, the entire structure can be heated to temperatures above the temperature of the transition of the posistor layer to the low-conductivity state. In this case, almost all the applied voltage drops across it.