Effect of nonstoichiometric defects and Cr ions on the photoconductivity of Bi12SiO20 crystals

Автор(и)

  • T. V. Panchenko Oles Honchar Dnipro National University, Dnipro, Ukraine
  • L. M. Karpova Ukrainian State University of Chemical Technology, Dnipro, Ukraine

DOI:

https://doi.org/10.15421/332005

Ключові слова:

surface photoconductivity, annealing, vacuum, silicosillenite crystals, chromium impurity

Анотація

The results of an experimental study of the effect of nonstoichiometric defects in oxygen and the Bi:Si ratio, as well as Cr ions, on the photoconductivity of Bi12SiO20 crystals are presented. It is shown that varying the annealing conditions allows one to modify the spectral distribution and quantitative characteristics of photoconductivity substantially.

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Опубліковано

2020-09-10

Номер

Том 28 № 1 (2020)

Розділ

Articles